Compensation of Hot Carrier Degradation Enabled by Forward Back Bias in π-GAA-π MOSFET

نویسندگان

چکیده

Forward back biasing (FBB) technique is considered as a potential solution for aging compensation in silicon on insulator (SOI) MOSFET. However, traditional SOI devices under FBB would suffer from extra off-state leakage current $(I_{\mathrm{ off}})$ and undesirable static power consumption. In this work, we studied the hot carrier degradation notation="LaTeX">$\pi $ -GAA- With unique hybrid gate structure, performance found to be less severe than pure device; moreover it can partially recovered by without sacrifice of notation="LaTeX">$I_{\mathrm{ off}}$ . The presence gates offer tunability that not provided GAA gate; while component effectively prevent impact affecting surface potential. Our findings MOSFETs beneficial device reliability improvement.

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ژورنال

عنوان ژورنال: IEEE Journal of the Electron Devices Society

سال: 2023

ISSN: ['2168-6734']

DOI: https://doi.org/10.1109/jeds.2023.3278936